The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Dec. 28, 2021
Filed:
Dec. 27, 2019
Western Digital Technologies, Inc., San Jose, CA (US);
Daniele Mauri, San Jose, CA (US);
Yuankai Zheng, Fremont, CA (US);
Lei Wang, San Jose, CA (US);
Christian Kaiser, San Jose, CA (US);
WESTERN DIGITAL TECHNOLOGIES, INC., San Jose, CA (US);
Abstract
A method of fabricating a TMR based magnetic sensor in a Wheatstone configuration includes conducting a first anneal of a magnetic tunnel junction (MTJ) and conducting a second anneal of the MTJ. The MTJ includes a first antiferromagnetic (AFM) pinning layer, a pinned layer over the first AFM pinning layer, an anti-parallel coupled layer over the pinned layer, a reference layer over the anti-parallel coupled layer, a barrier layer over the reference layer, a free layer over the barrier layer, and a second antiferromagnetic pinning layer over the free layer. The first anneal of the MTJ sets the first AFM pinning layer, the pinned layer, the free layer, and the second AFM pinning layer in a first magnetization direction. The second anneal of the MTJ resets the free layer and the second AFM pinning layer in a second magnetization direction. An operating field range of the TMR based magnetic sensor is over ±100 Oe.