The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Dec. 21, 2021
Filed:
Mar. 06, 2019
Sharp Kabushiki Kaisha, Osaka, JP;
Tetsuo Kikuchi, Sakai, JP;
Masahiko Suzuki, Sakai, JP;
Setsuji Nishimiya, Sakai, JP;
Teruyuki Ueda, Sakai, JP;
Masamitsu Yamanaka, Sakai, JP;
Tohru Daitoh, Sakai, JP;
Hajime Imai, Sakai, JP;
Kengo Hara, Sakai, JP;
SHARP KABUSHIKI KAISHA, Sakai, JP;
Abstract
A semiconductor device includes a thin film transistor, wherein: a semiconductor layer of the thin film transistor has a layered structure including a lower oxide semiconductor layer including In, Ga, Zn and Sn and an upper oxide semiconductor layer arranged on the lower oxide semiconductor layer and including In, Ga and Zn; a thickness of the lower oxide semiconductor layer is 20 nm or less; an atomic ratio of Sn with respect to all metal elements of the lower oxide semiconductor layer is 5% or more; the upper oxide semiconductor layer includes no Sn, or an atomic ratio of Sn with respect to all metal elements of the upper oxide semiconductor layer is smaller than an atomic ratio of Sn with respect to all metal elements of the lower oxide semiconductor layer; and a first angle θbetween a side surface and a lower surface of the lower oxide semiconductor layer is smaller than a second angle θbetween a side surface and a lower surface of the upper oxide semiconductor layer.