The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Dec. 21, 2021
Filed:
Nov. 26, 2019
Texas Instruments Incorporated, Dallas, TX (US);
Bernhard Benna, Nandlstadt, DE;
Berthold Staufer, Moosberg, DE;
TEXAS INSTRUMENTS INCORPORATED, Dallas, TX (US);
Abstract
An integrated circuit includes one or more bipolar transistors, each including a first dielectric layer located over a semiconductor layer having a first conductivity type, the dielectric layer including an opening. A second dielectric layer is located between the first dielectric layer and the semiconductor layer. The second dielectric layer defines a first recess between the first dielectric layer and the semiconductor substrate at a first side of the opening, and a second recess between the first dielectric layer and the semiconductor substrate at a second opposite side of the opening. A first doped region of the semiconductor layer is located under the opening, the first doped region having a different second conductivity type and a first width. A second doped region of the semiconductor layer is also under the opening, the second doped region having the second conductivity type and underlying the first recess and the second recess.