The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Dec. 21, 2021

Filed:

Jun. 11, 2018
Applicant:

Shanghai Harvest Intelligence Technology Co., Ltd., Shanghai, CN;

Inventors:

Hong-Yih Tseng, Tainan, CN;

Jiandong Huang, Shanghai, CN;

Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 27/00 (2006.01); H01L 31/00 (2006.01); H01L 27/146 (2006.01); H01L 31/105 (2006.01); H01L 31/18 (2006.01);
U.S. Cl.
CPC ...
H01L 27/14685 (2013.01); H01L 27/14612 (2013.01); H01L 27/14627 (2013.01); H01L 27/14643 (2013.01); H01L 27/14692 (2013.01); H01L 31/105 (2013.01); H01L 31/186 (2013.01); H01L 31/1824 (2013.01);
Abstract

An image sensor includes a plurality of pixel sensing portions arranged in m columns and n rows. Each of the pixel sensing portions includes at least one thin film transistor and a photodetection diode () including n-type (), intrinsic () and p-type () semiconductor layers. The p-type semiconductor layer () includes a multi-layered structure including lower () and upper () p-type semiconductor layered portions. The upper p-type semiconductor layered portion () has a band gap greater than 1.7 eV and has a p-type dopant in an amount not less than two times of that of the lower p-type semiconductor layered portion (). An image sensing-enabled display apparatus and a method of making the image sensor are also disclosed.


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