The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Dec. 21, 2021

Filed:

May. 20, 2019
Applicants:

Hefei Boe Optoelectronics Technology Co., Ltd., Anhui, CN;

Boe Technology Group Co., Ltd., Beijing, CN;

Inventors:

Kui Gong, Beijing, CN;

Dezhi Xu, Beijing, CN;

Wei Tian, Beijing, CN;

Honggang Gu, Beijing, CN;

Yuhu Zhang, Beijing, CN;

Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 27/00 (2006.01); H01L 29/00 (2006.01); H01L 27/12 (2006.01); H01L 29/45 (2006.01); H01L 29/66 (2006.01); H01L 29/786 (2006.01); G03F 1/32 (2012.01); G03F 7/20 (2006.01); G03F 7/32 (2006.01);
U.S. Cl.
CPC ...
H01L 27/1288 (2013.01); H01L 27/1225 (2013.01); H01L 27/1237 (2013.01); H01L 29/45 (2013.01); H01L 29/66969 (2013.01); H01L 29/7869 (2013.01); G03F 1/32 (2013.01); G03F 7/201 (2013.01); G03F 7/32 (2013.01);
Abstract

Disclosed is a method of preparing a thin film transistor substrate, a thin film transistor substrate, and a display apparatus. The method includes forming a conductive material layer, forming a hydrophobic insulation layer on the conductive material layer, forming a photoresist layer on the hydrophobic insulation layer, patterning the photoresist layer to form a photoresist pattern, removing a segment in the hydrophobic insulation layer that is not covered by the photoresist pattern to form a hydrophobic insulation pattern, and removing a segment in the conductive material layer that is not covered by the hydrophobic insulation pattern to form a conductive pattern.


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