The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Dec. 21, 2021
Filed:
Sep. 27, 2019
Applicant:
Renesas Electronics Corporation, Tokyo, JP;
Inventor:
Tomohiro Hayashi, Tokyo, JP;
Assignee:
RENESAS ELECTRONICS CORPORATION, Tokyo, JP;
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 27/11568 (2017.01); H01L 29/06 (2006.01); H01L 27/11521 (2017.01); H01L 29/423 (2006.01); H01L 21/28 (2006.01); H01L 27/088 (2006.01); H01L 21/8234 (2006.01); H01L 29/78 (2006.01); H01L 29/66 (2006.01); H01L 21/762 (2006.01); H01L 21/8239 (2006.01); H01L 29/792 (2006.01);
U.S. Cl.
CPC ...
H01L 27/11568 (2013.01); H01L 21/76224 (2013.01); H01L 21/76229 (2013.01); H01L 21/8239 (2013.01); H01L 21/823431 (2013.01); H01L 21/823481 (2013.01); H01L 27/0886 (2013.01); H01L 27/11521 (2013.01); H01L 29/0649 (2013.01); H01L 29/40114 (2019.08); H01L 29/40117 (2019.08); H01L 29/4236 (2013.01); H01L 29/66795 (2013.01); H01L 29/66825 (2013.01); H01L 29/66833 (2013.01); H01L 29/7851 (2013.01); H01L 29/792 (2013.01);
Abstract
A method for manufacturing a semiconductor device includes a step of reducing a thickness of a silicon oxide film embedded in an element isolation trench including fins in order to form protruded fins. In the step, the silicon oxide film is etched while covering part of an upper surface of the silicon oxide film with a resist pattern. At this time, the resist pattern is formed such that a distance between the fin and the resist pattern is equal to or less than a predetermined interval which is an arrangement interval of the plurality of fins.