The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Dec. 21, 2021

Filed:

Aug. 27, 2019
Applicant:

Texas Instruments Incorporated, Dallas, TX (US);

Inventors:

Byron Joseph Palla, Murphy, TX (US);

Stephen Alan Keller, Plano, TX (US);

Brian Edward Hornung, Richardson, TX (US);

Brian K. Kirkpatrick, Allen, TX (US);

Douglas Ticknor Grider, McKinney, TX (US);

Assignee:
Attorneys:
Primary Examiner:
Int. Cl.
CPC ...
H01L 21/311 (2006.01); H01L 21/302 (2006.01); H01L 21/762 (2006.01); H01L 27/105 (2006.01); H01L 27/11573 (2017.01);
U.S. Cl.
CPC ...
H01L 21/31111 (2013.01); H01L 21/302 (2013.01); H01L 21/76224 (2013.01); H01L 27/1052 (2013.01); H01L 27/11573 (2013.01);
Abstract

A method of forming an integrated circuit includes forming a first layer having a first material type over a first side of a semiconductor wafer. A second layer having a second different material type is removed from a second opposing side of the semiconductor wafer using a first process that removes the second material type at a greater rate than the first material type. Subsequent to removing the second layer, the first layer is removed using a second different process.


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