The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Dec. 21, 2021

Filed:

Feb. 28, 2019
Applicant:

International Business Machines Corporation, Armonk, NY (US);

Inventors:

Chandrasekharan Kothandaraman, New York, NY (US);

Dimitri Houssameddine, White Plains, NY (US);

Bruce B. Doris, Slingerlands, NY (US);

Attorneys:
Primary Examiner:
Int. Cl.
CPC ...
G06F 21/72 (2013.01); G11C 11/16 (2006.01); H04L 9/08 (2006.01); H04L 9/30 (2006.01); H04L 9/14 (2006.01);
U.S. Cl.
CPC ...
G06F 21/72 (2013.01); G06F 21/725 (2013.01); G11C 11/161 (2013.01); G11C 11/1659 (2013.01); G11C 11/1673 (2013.01); G11C 11/1695 (2013.01); H04L 9/0861 (2013.01); H04L 9/14 (2013.01); H04L 9/30 (2013.01);
Abstract

A memory system in an integrated circuit and a method of operation. The system includes multiple magnetic tunnel junction (MTJ) structures, each MTJ structure storing a logic value according to a resistive state. A selection switch device associated with a respective MTJ structure is activated to select one of the multiple MTJ structures at a time. An output circuit is configured to sense the resistive state of a selected MTJ structure, the output circuit having a selectable input reference resistance value according to a selected first reference resistance or a second reference resistance value, and outputting a first logic value of the selected MTJ structure responsive to a resistive state of the MTJ structure and a selected first resistance reference value, or alternately outputting a second logic value of the selected MTJ structure responsive to the resistive state of the MTJ structure and a selected second resistance reference value.


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