The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Dec. 21, 2021
Filed:
Apr. 14, 2017
Tcl Technology Group Corporation, Huizhou, CN;
TCL TECHNOLOGY GROUP CORPORATION, Huizhou, CN;
Abstract
The present invention provides a quantum dot (QD) composite material, a preparation method, and a semiconductor device. The method includes synthesizing a first compound at a predetermined position, synthesizing a second compound on the surface of the first compound, the second compound and the first compound having a same alloy composition or having different alloy compositions, and forming the QD composite material through a cation exchange reaction between the first compound and the second compound. The light-emission peak wavelength of the QD composite material experiences one or more of a blue-shift, a red-shift, and no-shift. The method uses the QD successive ionic layer adsorption and reaction (SILAR) synthesis method to precisely control layer-by-layer QD growth and the QD one-step synthesis method to form a composition-gradient transition shell. The QD composite materials prepared by the disclosed method not only achieve higher light-emitting efficiency, but also meet the comprehensive requirements of semiconductor devices and corresponding display technologies on QD composite materials.