The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Dec. 21, 2021
Filed:
Apr. 05, 2019
East China Normal University, Shanghai, CN;
East China Normal University, Shanghai, CN;
Abstract
Method of fabricating a microfluidic device by means of inducing internal cracks in fused silica employing a picosecond laser beam, firstly utilizing irradiation of a focused temporally controlled picosecond laser beam in fused silica to generate a spatially selective modification region including randomly oriented nanocracks, then employing chemical etching to remove the irradiated area and obtain a hollow and connected three-dimensional microstructure, thereby achieving three-dimensional fabrication of microchannel structures inside the fused silica. The method can realize polarization insensitive three-dimensional uniform etching by regulating the pulse width of the picosecond laser beam, and has high chemical etch rate and selectivity, applicable for fabrication of large-sized three-dimensional microfluidic systems, high-precision 3D glass printing, etc.