The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Dec. 14, 2021

Filed:

May. 09, 2019
Applicant:

Texas Instruments Incorporated, Dallas, TX (US);

Inventors:

Philomena Cleopha Brady, Corinth, TX (US);

Ananthakrishnan Viswanathan, Allen, TX (US);

Shanguang Xu, Plano, TX (US);

Assignee:
Attorneys:
Primary Examiner:
Int. Cl.
CPC ...
H02M 3/335 (2006.01); H02M 1/42 (2007.01); H02M 1/44 (2007.01); H02M 3/156 (2006.01); H02M 1/00 (2006.01); H02M 1/08 (2006.01);
U.S. Cl.
CPC ...
H02M 3/33515 (2013.01); H02M 1/42 (2013.01); H02M 1/44 (2013.01); H02M 3/156 (2013.01); H02M 1/0054 (2021.05); H02M 1/08 (2013.01);
Abstract

A switching converter is provided that includes a power MOSFET, a controller having a drive pin connected to a gate terminal of the power MOSFET, and a resistor connected to the gate terminal. A compensation time selection circuit is included that has compensation times stored therein. A compensation time is selected from the compensation times based on a value of the resistor and stored in the controller. The selected compensation time compensates for an inherent delay in switching the power MOSFET to an ON state after the power MOSFET receives a signal to switch to the ON state to allow the power MOSFET to switch to the ON state when a drain voltage of the power MOSFET's reaches its lowest value during a switching cycle.


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