The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Dec. 14, 2021
Filed:
Feb. 14, 2018
Dowa Electronics Materials Co., Ltd., Tokyo, JP;
Tomohiko Shibata, Akita, JP;
DOWA Electronics Materials Co., Ltd., Tokyo, JP;
Abstract
Provided are a deep ultraviolet light emitting element that exhibits both high light output power and an excellent reliability, and a method of manufacturing the same. A deep ultraviolet light emitting elementof this disclosure comprises an n-type semiconductor layer, a light-emitting layer, and a p-type semiconductor layers, on a substrate, in this order. The light-emitting layeremits deep ultraviolet light. The p-type semiconductor layerscomprise a p-type first layerA and a p-type contact layerB directly on the p-type first layerA. The p-type contact layerB is made of a non-nitride p-type group III-V or p-type group IV semiconductor material, and functions as a reflective layer to reflect the deep ultraviolet light. The reflectance of light at a wavelength of 280 nm incident on the p-type contact layerB from the p-type first layerA is 10% or higher.
Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile