The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Dec. 14, 2021
Filed:
Jan. 14, 2019
Applicant:
First Solar, Inc., Tempe, AZ (US);
Inventors:
Sachit Grover, Campbell, CA (US);
Dingyuan Lu, San Jose, CA (US);
Roger Malik, Santa Clara, CA (US);
Gang Xiong, Santa Clara, CA (US);
Assignee:
First Solar, Inc., Tempe, AZ (US);
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 31/18 (2006.01); H01L 31/0296 (2006.01); H01L 31/073 (2012.01);
U.S. Cl.
CPC ...
H01L 31/1828 (2013.01); H01L 31/1832 (2013.01); H01L 31/1872 (2013.01); H01L 31/02963 (2013.01); H01L 31/02966 (2013.01); H01L 31/073 (2013.01);
Abstract
According to the embodiments provided herein, a method for doping an absorber layer can include contacting the absorber layer with an annealing compound. The annealing compound can include cadmium chloride and a group V salt comprising an anion and a cation. The anion, the cation, or both can include a group V element. The method can include annealing the absorber layer, whereby the absorber layer is doped with at least a portion of the group V element of the annealing compound.