The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Dec. 14, 2021

Filed:

Nov. 15, 2016
Applicant:

Shin-etsu Chemical Co., Ltd., Tokyo, JP;

Inventors:

Ryo Mitta, Kamisu, JP;

Takenori Watabe, Annaka, JP;

Hiroyuki Ohtsuka, Nagano, JP;

Assignee:
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 31/05 (2014.01); H01L 31/0224 (2006.01); H01L 31/068 (2012.01); H01L 31/18 (2006.01); H01L 31/0216 (2014.01);
U.S. Cl.
CPC ...
H01L 31/022441 (2013.01); H01L 31/02167 (2013.01); H01L 31/05 (2013.01); H01L 31/068 (2013.01); H01L 31/0682 (2013.01); H01L 31/18 (2013.01); H01L 31/1804 (2013.01); Y02E 10/547 (2013.01); Y02P 70/50 (2015.11);
Abstract

To Provide a back contact type solar cell with high photovoltaic-conversion efficiency which can be easily manufactured with good yield at low cost. The high photovoltaic-conversion efficiency solar cell of the present invention includes on a back surface, as a non-light receiving surface, of a first conductive type semiconductor substrate: a first conductive type diffusion layer where first conductive type impurities are diffused; a second conductive type diffusion layer where second conductive type impurities are diffused; and a high resistive layer or an intrinsic semiconductor layer formed between the first conductive type diffusion layer and the second conductive type diffusion layer.


Find Patent Forward Citations

Loading…