The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Dec. 14, 2021
Filed:
Feb. 05, 2020
Applicant:
Oepic Semiconductors, Inc., Sunnyvale, CA (US);
Inventors:
Yi-Ching Pao, Sunnyvale, CA (US);
Majid Riaziat, Sunnyvale, CA (US);
Ta-Chung Wu, Sunnyvale, CA (US);
Assignee:
OEPIC SEMICONDUCTORS, INC., Sunnyvale, CA (US);
Attorneys:
Primary Examiner:
Int. Cl.
CPC ...
H01L 29/66 (2006.01); H01L 21/332 (2006.01); H01L 31/0224 (2006.01); H01L 31/0352 (2006.01); H01L 31/105 (2006.01);
U.S. Cl.
CPC ...
H01L 31/022408 (2013.01); H01L 31/035281 (2013.01); H01L 31/105 (2013.01);
Abstract
A photodiode has a substrate. A mesa structure is formed on the substrate, wherein the mesa structure has an n region containing an n type dopant formed on the substrate, an intermediate region positioned on the n region and a p region formed on the intermediate region and containing a p type dopant. A contact is formed on a top surface of the mesa and attached to the p region. The contact is formed around an outer perimeter of the mesa. The mesa has a diameter of 30 um or less.