The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Dec. 14, 2021
Filed:
Apr. 14, 2020
Electronics and Telecommunications Research Institute, Daejeon, KR;
Dong Woo Park, Sejong-si, KR;
Kyung Hyun Park, Daejeon, KR;
Jeong Woo Park, Daejeon, KR;
Jun Hwan Shin, Daejeon, KR;
Eui Su Lee, Sejong-si, KR;
Hyun Soo Kim, Daegu, KR;
Kiwon Moon, Daejeon, KR;
Il Min Lee, Daejeon, KR;
Electronics and Telecommunications Research Institute, Daejeon, KR;
Abstract
A Schottky barrier diode includes a substrate, a first semiconductor layer formed on the substrate, a second semiconductor layer formed on the first semiconductor layer, and a metal layer formed on the second semiconductor layer to form a Schottky barrier, wherein the first semiconductor layer and the second semiconductor layer are formed of different materials, and a conduction band offset between the first semiconductor layer and the second semiconductor layer is less than a set value.