The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Dec. 14, 2021
Filed:
Nov. 04, 2019
Fujitsu Limited, Kawasaki, JP;
Youichi Kamada, Yamato, JP;
FUJITSU LIMITED, Kawasaki, JP;
Abstract
A semiconductor device includes a substrate; a first semiconductor layer and a second semiconductor layer, both including a nitride semiconductor; a gate electrode; a source electrode; a drain electrode formed on the second semiconductor layer; and a first insulating film and a second insulating film formed on the second semiconductor layer. The first insulating film is formed on a gate-electrode side and the second insulating film is formed on a drain-electrode side between the gate electrode and the drain electrode. A part of the gate electrode is formed on the first insulating film. The first insulating film and the second insulating film are formed of silicon nitride. The Si—H bond density in the first insulating film is higher than that in the second insulating film. The N—H bond density in the second insulating film is higher than that in the first insulating film.