The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Dec. 14, 2021
Filed:
Sep. 11, 2020
Kabushiki Kaisha Toshiba, Tokyo, JP;
Toshiba Electronic Devices & Storage Corporation, Tokyo, JP;
Hitoshi Kobayashi, Yamato Kanagawa, JP;
KABUSHIKI KAISHA TOSHIBA, Tokyo, JP;
TOSHIBA ELECTRONIC DEVICES & STORAGE CORPORATION, Tokyo, JP;
Abstract
A semiconductor device includes a first nitride semiconductor layer; a second nitride semiconductor layer provided on the first nitride semiconductor layer and having a bandgap larger than a bandgap of the first nitride semiconductor layer; a nitride insulating layer provided between the first nitride semiconductor layer and the second nitride semiconductor layer; a plurality of first drain electrodes each having a part provided on the nitride insulating layer and a part provided beneath the nitride insulating layer; a plurality of second drain electrodes each having a part provided on the nitride insulating layer and a part provided beneath the nitride insulating layer; a plurality of third drain electrodes each having a part provided on the nitride insulating layer and a part provided beneath the nitride insulating layer; a plurality of fourth drain electrodes each having a part provided on the nitride insulating layer and a part provided beneath the nitride insulating layer; a plurality of first source electrodes provided between the first drain electrodes and the third drain electrodes, the first source electrodes each having a part provided on the nitride insulating layer and a part provided beneath the nitride insulating layer; and a plurality of second source electrodes provided between the first drain electrodes and the third drain electrodes, the second source electrodes each having a part provided on the nitride insulating layer and a part provided beneath the nitride insulating layer. The first drain electrodes are separated from each other by a first distance in a first direction parallel to an interface between the first nitride semiconductor layer and the nitride insulating layer. The second drain electrodes are separated from each other by a second distance in the first direction and positioned from the first drain electrodes by a third distance in the first direction and positioned from the first drain electrodes by a fourth distance in a second direction intersecting with the first direction and parallel to the interface and electrically connected to the first drain electrodes. The third drain electrodes are separated from each other by a fifth distance in the first direction and separated from the first drain electrodes and the second drain electrodes in the second direction. The fourth drain electrodes are separated from each other by a sixth distance in the first direction and positioned from the third drain electrodes by a seventh distance in the first direction and positioned from the third drain electrodes by an eighth distance in the second direction and separated from the first drain electrodes and the second drain electrodes and electrically connected to the third drain electrodes. The first source electrodes are separated from each other by a ninth distance in the first direction. The second source electrodes are separated from each other by a tenth distance in the first direction and positioned from the first source electrodes by an eleventh distance in the first direction and positioned from the first source electrodes by a twelfth distance in the second direction and electrically connected to the first source electrodes.