The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Dec. 14, 2021

Filed:

Sep. 19, 2019
Applicant:

Powerchip Semiconductor Manufacturing Corporation, Hsinchu, TW;

Inventor:

Chun-Sheng Chen, Taipei, TW;

Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 29/66 (2006.01); H01L 29/10 (2006.01); H01L 29/08 (2006.01); H01L 29/786 (2006.01);
U.S. Cl.
CPC ...
H01L 29/1037 (2013.01); H01L 29/0847 (2013.01); H01L 29/66666 (2013.01); H01L 29/78642 (2013.01);
Abstract

A channel all-around semiconductor device and a method of manufacturing the same are provided. The semiconductor device includes a plurality of gate structures and a multi-connected channel layer. The gate structures have the same extension direction, and each of the gate structures has opposite first end and second end. The gate structures are all surrounded by the multi-connected channel layer, and the plane direction of the multi-connected channel layer is perpendicular to the above extension direction, so that the channels of the gate structures are connected to each other.


Find Patent Forward Citations

Chen, Chun-Sheng. (2021). Channel all-around semiconductor device and method of manufacturing the same (U.S. Patent No. 11201213). U.S. Patent and Trademark Office. https://idiyas.com/patent/badge/11201213

Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile

Loading…