The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Dec. 14, 2021

Filed:

Nov. 22, 2019
Applicant:

Nuvoton Technology Corporation, Hsinchu, TW;

Inventors:

Syed Neyaz Imam, Bihar, IN;

Po-An Chen, Toufen, TW;

Assignee:

NUVOTON TECHNOLOGY CORPORATION, Hsinchu Science Park, TW;

Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 29/06 (2006.01); H01L 29/10 (2006.01); H01L 29/78 (2006.01); H01L 29/66 (2006.01); H01L 21/266 (2006.01); H01L 21/225 (2006.01); H01L 21/324 (2006.01); H01L 21/8234 (2006.01); H01L 29/40 (2006.01); H01L 21/765 (2006.01); H01L 21/265 (2006.01);
U.S. Cl.
CPC ...
H01L 29/063 (2013.01); H01L 21/2253 (2013.01); H01L 21/266 (2013.01); H01L 21/26513 (2013.01); H01L 21/324 (2013.01); H01L 21/765 (2013.01); H01L 21/823493 (2013.01); H01L 29/1095 (2013.01); H01L 29/408 (2013.01); H01L 29/66681 (2013.01); H01L 29/7816 (2013.01);
Abstract

A method includes providing a semiconductor substrate, and forming a first N-type implant region and a second N-type implant region in the semiconductor substrate. The first N-type implant region and the second N-type implant region are separated by a portion of the semiconductor substrate. The method also includes forming a first P-type implant region in the semiconductor substrate, and performing a heat treatment process on the semiconductor substrate to form an N-type well region and a P-type well region in the semiconductor substrate. The N-type well region has a first portion, a second portion, and a third portion between the first portion and the second portion. The doping concentration of the third portion is lower than the doping concentration of the first portion and the doping concentration of the second portion.


Find Patent Forward Citations

Loading…