The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Dec. 14, 2021

Filed:

Sep. 03, 2019
Applicant:

Toshiba Memory Corporation, Tokyo, JP;

Inventors:

Atsushi Kawasumi, Fujisawa Kanagawa, JP;

Tsuneo Inaba, Kamakura Kanagawa, JP;

Assignee:
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 47/00 (2006.01); H01L 27/24 (2006.01); H01L 45/00 (2006.01); H01L 27/10 (2006.01); H01L 21/822 (2006.01);
U.S. Cl.
CPC ...
H01L 27/2481 (2013.01); H01L 21/8221 (2013.01); H01L 27/10 (2013.01); H01L 45/06 (2013.01); H01L 45/1293 (2013.01); H01L 45/141 (2013.01);
Abstract

A semiconductor memory device includes a first wiring extending in a first direction, a second wiring above the first wiring and extending in a second direction, first and second memory cells electrically connected in parallel between the first and second wirings and each including a phase change material, a first insulating film on a side portion of the first cell facing the second cell in the second direction, a third wiring above the second wiring and extending in the second direction, a fourth wiring above the third wiring and extending in the first direction, third and fourth memory cells electrically connected between the third and fourth wirings in parallel and each including a phase change material, and a second insulating film on a side of the third cell facing the fourth cell in the second direction. The first film has a higher thermal insulation capacity than the second film.


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