The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Dec. 14, 2021
Filed:
Sep. 24, 2020
Applicant:
SK Hynix Inc., Icheon-si, KR;
Inventor:
Dae Sung Eom, Cheongju-si, KR;
Assignee:
SK hynix Inc., Icheon-si, KR;
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 27/11582 (2017.01); H01L 23/522 (2006.01); H01L 29/10 (2006.01); H01L 23/528 (2006.01); H01L 23/532 (2006.01); H01L 21/768 (2006.01); H01L 21/311 (2006.01); H01L 21/3105 (2006.01); H01L 27/1157 (2017.01);
U.S. Cl.
CPC ...
H01L 27/11582 (2013.01); H01L 21/31053 (2013.01); H01L 21/31144 (2013.01); H01L 21/76802 (2013.01); H01L 21/76877 (2013.01); H01L 21/76897 (2013.01); H01L 23/5226 (2013.01); H01L 23/5283 (2013.01); H01L 23/53266 (2013.01); H01L 27/1157 (2013.01); H01L 29/1037 (2013.01); H01L 23/53271 (2013.01);
Abstract
A semiconductor device includes conductive patterns stacked and spaced apart from each other in a first direction to form a stepped structure, a stepped insulating layer overlapping the stepped structure, contact plugs extending through the stepped insulating layer in the first direction to contact respective contact portions of the conductive patterns, and barrier patterns disposed on sidewalls of the stepped insulating layer.