The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Dec. 14, 2021

Filed:

Jan. 17, 2020
Applicant:

Samsung Electronics Co., Ltd., Gyeonggi-do, KR;

Inventors:

Sang-Hoon Baek, Seoul, KR;

Sun-Young Park, Hwaseong-si, KR;

Sang-Kyu Oh, Gwacheon-si, KR;

Ha-young Kim, Seoul, KR;

Jung-Ho Do, Yongin-si, KR;

Moo-Gyu Bae, Incheon, KR;

Seung-Young Lee, Incheon, KR;

Assignee:
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 23/48 (2006.01); H01L 29/40 (2006.01); H01L 27/088 (2006.01); H01L 27/02 (2006.01); H01L 27/11 (2006.01); H01L 21/84 (2006.01); H01L 27/12 (2006.01); H01L 21/8234 (2006.01); H01L 23/528 (2006.01);
U.S. Cl.
CPC ...
H01L 27/088 (2013.01); H01L 21/823431 (2013.01); H01L 21/823475 (2013.01); H01L 21/845 (2013.01); H01L 23/528 (2013.01); H01L 27/0207 (2013.01); H01L 27/0886 (2013.01); H01L 27/1104 (2013.01); H01L 27/1211 (2013.01); H01L 21/823437 (2013.01);
Abstract

A system on chip includes first to third nanowires extending in a second direction, first to third gate lines respectively surrounding the first to third nanowires, each of the first to third gate lines extending in a first direction across the second direction, a gate isolation region cutting the first to third gate lines and extending in the second direction, a first gate contact formed on the second gate line arranged between the first gate line and the third gate line, and electrically connecting the cut second gate line, a second gate contact formed on the first gate line, a third gate contact formed on the third gate line, a first metal line electrically connecting the second gate contact and the third gate contact; and a second metal line electrically connected to the first gate contact.


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