The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Dec. 14, 2021
Filed:
Oct. 23, 2019
Vanguard International Semiconductor Corporation, Hsinchu, TW;
Jian-Hsing Lee, Puzih, TW;
Yeh-Jen Huang, Hsinchu, TW;
Wen-Hsin Lin, Jhubei, TW;
Chun-Jung Chiu, Tainan, TW;
Vanguard International Semiconductor Corporation, Hsinchu, TW;
Abstract
A semiconductor device structure is provided. The semiconductor device structure includes a semiconductor substrate and a first well region that has first conductive type therein. The semiconductor device structure also includes a first doped region embedded in the first well region, and having a second conductive type that is different from the first conductive type. The semiconductor device structure further includes a second well region that has the second conductive type. In addition, the semiconductor device structure includes a first metal electrode disposed on the first doped region of the semiconductor substrate and a second metal electrode disposed on the second well region of the semiconductor substrate.