The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Dec. 14, 2021
Filed:
Apr. 02, 2020
Samsung Electronics Co., Ltd., Suwon-si, KR;
Jaemun Kim, Seoul, KR;
Gyeom Kim, Hwaseong-si, KR;
Seung Hun Lee, Hwaseong-si, KR;
Dahye Kim, Yongin-si, KR;
Ilgyou Shin, Seoul, KR;
Sangmoon Lee, Suwon-si, KR;
Kyungin Choi, Seoul, KR;
SAMSUNG ELECTRONICS CO., LTD., Suwon-si, KR;
Abstract
A method includes forming an active pattern on a substrate, the active pattern comprising first semiconductor patterns and second semiconductor patterns, which are alternately stacked, forming a capping pattern on a top surface and a sidewall of the active pattern, performing a deposition process on the capping pattern to form an insulating layer, and forming a sacrificial gate pattern intersecting the active pattern on the insulating layer. The capping pattern has a crystalline structure and is in physical contact with sidewalls of the first semiconductor patterns and sidewalls of the second semiconductor patterns.