The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Dec. 14, 2021
Filed:
May. 24, 2018
Boe Technology Group Co., Ltd., Beijing, CN;
Hefei Xinsheng Optoelectronics Technology Co., Ltd., Hefei, CN;
Mengyu Luan, Beijing, CN;
Xinfeng Wu, Beijing, CN;
Youyuan Hu, Beijing, CN;
Xinzhu Wang, Beijing, CN;
Fei Li, Beijing, CN;
Huihui Li, Beijing, CN;
Chengpeng Zhao, Beijing, CN;
Bo Mao, Beijing, CN;
Kai Yang, Beijing, CN;
Zhongsheng Qi, Beijing, CN;
Jie Liu, Beijing, CN;
HEFEI XINSHENG OPTOELECTRONICS TECHNOLOGY CO., LTD., Hefei, CN;
BOE TECHNOLOGY GROUP CO., LTD., Beijing, CN;
Abstract
A pixel circuit is provided. A first terminal and a second terminal of a light-emitting sub-circuit are coupled to a first power supply terminal and a compensation sub-circuit respectively. A short-circuiting sub-circuit is coupled to the first terminal and the second terminal of, and short-circuits under control of a short-circuiting control terminal, the light-emitting sub-circuit. The compensation sub-circuit is coupled to a data voltage terminal, a reference voltage terminal, and a first electrode and a gate electrode of a driving transistor. The light-emitting sub-circuit emits a light of brightness in a level corresponding to a current flowing therethrough. The compensation sub-circuit loads, based on the data voltage terminal and the reference voltage terminal, a driving voltage related to a threshold voltage of the driving transistor onto the gate electrode of the driving transistor, such that a current flowing through the driving transistor is not influenced by its threshold voltage.