The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Dec. 07, 2021

Filed:

Jul. 09, 2019
Applicant:

Omnivision Technologies, Inc., Santa Clara, CA (US);

Inventors:

Keiji Mabuchi, Los Altos, CA (US);

Sohei Manabe, San Jose, CA (US);

Lindsay Grant, Los Gatos, CA (US);

Assignee:

OmniVision Technologies, Inc., Santa Clara, CA (US);

Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H04N 5/357 (2011.01); H04N 5/374 (2011.01); H04N 5/369 (2011.01); H04N 5/361 (2011.01); H04N 5/3745 (2011.01); H04N 5/378 (2011.01);
U.S. Cl.
CPC ...
H04N 5/361 (2013.01); H04N 5/3575 (2013.01); H04N 5/3698 (2013.01); H04N 5/378 (2013.01); H04N 5/37452 (2013.01); H04N 5/37457 (2013.01);
Abstract

An image sensor has an array of pixels, each pixel having an associated shutter transistor coupled to transfer a charge dependent on light exposure of the pixel onto an image storage capacitor, the image-storage capacitors being configured to be read into an analog to digital converter. The shutter transistors are P-type transistors in N-wells, the wells held at an analog power voltage to reduce sensitivity of pixels to dark current; in an alternative embodiment the shutter transistors are N-type transistors in P-wells, the wells held at an analog ground voltage.


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