The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Dec. 07, 2021

Filed:

Jul. 06, 2020
Applicant:

Psemi Corporation, San Diego, CA (US);

Inventors:

Alexander Dribinsky, Naperville, IL (US);

Tae Youn Kim, Irvine, CA (US);

Dylan J. Kelly, San Diego, CA (US);

Christopher N. Brindle, Poway, CA (US);

Assignee:

pSemi Corporation, San Diego, CA (US);

Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H03K 17/16 (2006.01); H03K 17/10 (2006.01); H03K 17/284 (2006.01); H03K 17/687 (2006.01); H03K 17/689 (2006.01); H03K 17/04 (2006.01); H03K 17/06 (2006.01); H03K 17/08 (2006.01);
U.S. Cl.
CPC ...
H03K 17/161 (2013.01); H03K 17/102 (2013.01); H03K 17/284 (2013.01); H03K 17/689 (2013.01); H03K 17/6874 (2013.01); H03K 17/04 (2013.01); H03K 17/06 (2013.01); H03K 17/08 (2013.01); H03K 2217/0009 (2013.01);
Abstract

A circuit and method for controlling charge injection in a circuit are disclosed. In one embodiment, the circuit and method are employed in a semiconductor-on-insulator (SOI) Radio Frequency (RF) switch. In one embodiment, an SOI RF switch comprises a plurality of switching transistors coupled in series, referred to as 'stacked' transistors, and implemented as a monolithic integrated circuit on an SOI substrate. Charge injection control elements are coupled to receive injected charge from resistively-isolated nodes located between the switching transistors, and to convey the injected charge to at least one node that is not resistively-isolated. In one embodiment, the charge injection control elements comprise resistors. In another embodiment, the charge injection control elements comprise transistors. A method for controlling charge injection in a switch circuit is disclosed whereby injected charge is generated at resistively-isolated nodes between series coupled switching transistors, and the injected charge is conveyed to at least one node of the switch circuit that is not resistively-isolated.


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