The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Dec. 07, 2021

Filed:

Mar. 23, 2020
Applicant:

Samsung Electronics Co., Ltd., Suwon-si, KR;

Inventors:

Junhwan Paik, Hwaseong-si, KR;

Yongjin Park, Seoul, KR;

Jinwook Yang, Hwaseong-si, KR;

Gyuhwan Oh, Hwaseong-si, KR;

Jiyoon Chung, Yongin-si, KR;

Assignee:
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 47/00 (2006.01); H01L 45/00 (2006.01); H01L 23/528 (2006.01); H01L 27/24 (2006.01);
U.S. Cl.
CPC ...
H01L 45/06 (2013.01); H01L 23/528 (2013.01); H01L 27/2427 (2013.01); H01L 27/2463 (2013.01); H01L 45/126 (2013.01); H01L 45/1233 (2013.01); H01L 45/1683 (2013.01);
Abstract

A variable resistance memory device includes a first conductive line structure having an adiabatic line therein on a substrate, a variable resistance pattern contacting an upper surface of the first conductive line structure, a low resistance pattern contacting an upper surface of the variable resistance pattern, a selection structure on the low resistance pattern, and a second conductive line on the selection structure.


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