The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Dec. 07, 2021
Filed:
Sep. 16, 2019
Renesas Electronics Corporation, Tokyo, JP;
Katsuhiro Uchimura, Tokyo, JP;
RENESAS ELECTRONICS CORPORATION, Tokyo, JP;
Abstract
In a memory cell forming region including a dummy cell region, a plurality of fins which are parts of a semiconductor substrate, protrude from an upper surface of an element isolation portion and are formed adjacent to each other. A distance between a fin closest to a dummy fin among the plurality of fins and the dummy fin is shorter than a distance between two fins adjacent to each other. As a result, a position of an upper surface of the element isolation portion formed between two fins adjacent to each other and a position of an upper surface of the element isolation portion STI formed between the fin closest to the dummy fin and the dummy fin is lower than a position of an upper surface of the element isolation portion STI formed in a shunt region.