The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Dec. 07, 2021
Filed:
May. 14, 2019
Applicant:
Infineon Technologies Ag, Neubiberg, DE;
Inventors:
Ralf Siemieniec, Villach, AT;
Thomas Aichinger, Faak am See, AT;
Romain Esteve, Prisdorf, DE;
Ravi Keshav Joshi, Klagenfurt, AT;
Shiqin Niu, Freising, DE;
Assignee:
Infineon Technologies AG, Neubiberg, DE;
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 29/76 (2006.01); H01L 29/16 (2006.01); H01L 29/66 (2006.01); H01L 29/423 (2006.01); H01L 29/78 (2006.01);
U.S. Cl.
CPC ...
H01L 29/1608 (2013.01); H01L 29/4236 (2013.01); H01L 29/66068 (2013.01); H01L 29/66348 (2013.01); H01L 29/66666 (2013.01); H01L 29/7802 (2013.01); H01L 29/7813 (2013.01); H01L 29/7827 (2013.01); H01L 29/7828 (2013.01);
Abstract
A semiconductor device includes a gate electrode and a gate dielectric. The gate electrode extends from a first surface of a silicon carbide body into the silicon carbide body. The gate dielectric is between the gate electrode and the silicon carbide body. The gate electrode includes a metal structure and a semiconductor layer between the metal structure and the gate dielectric.