The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Dec. 07, 2021

Filed:

Jan. 15, 2020
Applicant:

Samsung Electronics Co., Ltd., Suwon-si, KR;

Inventors:

Jihye Yi, Suwon-si, KR;

Unki Kim, Suwon-si, KR;

Dongchan Suh, Suwon-si, KR;

Assignee:
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 29/10 (2006.01); H01L 29/423 (2006.01); H01L 29/78 (2006.01);
U.S. Cl.
CPC ...
H01L 29/1037 (2013.01); H01L 29/42392 (2013.01); H01L 29/785 (2013.01);
Abstract

A semiconductor device is described that includes a substrate, an active region protruding from the substrate and extending in a first direction, a plurality of channel layers disposed on the active region and spaced apart from each other in a direction perpendicular to an upper surface of the substrate, an isolation film disposed between a lowermost channel layer of the plurality of channel layers and the active region, a gate electrode surrounding the plurality of channel layers and extending in a second direction intersecting the first direction, and a source/drain region disposed on at least one side of the gate electrode and connected to each of the plurality of channel layers. The isolation film is disposed on a level higher than a bottom surface of the source/drain region.


Find Patent Forward Citations

Loading…