The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Dec. 07, 2021
Filed:
Feb. 13, 2018
Shindengen Electric Manufacturing Co., Ltd., Tokyo, JP;
SHINDENGEN ELECTRIC MANUFACTURING CO., LTD., Tokyo, JP;
Abstract
A semiconductor device includes: a drift layer of a first conductivity type which is made of silicon carbide; a junction region formed on one main surface of the drift layer; a junction termination extended region of the drift layer, the junction termination extended region being formed outside the junction region when the one main surface is viewed in plan view, and the junction termination extended region containing an impurity of a second conductivity type opposite to the first conductivity type; and a guard ring region of the drift layer, the guard ring region being formed at a position overlapping the junction termination extended region when the one main surface is viewed in plan view, and the guard ring region containing the impurity of the second conductivity type with a concentration that is higher than that of the junction termination extended region, wherein in the junction termination extended region, the concentration of the impurity of the second conductivity type in a depth direction from the one main surface increases from the one main surface down to a first depth, and the concentration of the impurity of the second conductivity type at the one main surface is one tenth or less the concentration of the impurity of the second conductivity type at the first depth and is higher than a concentration of an impurity of the first conductivity type of the drift layer.