The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Dec. 07, 2021
Filed:
Jan. 22, 2016
Applicant:
Sony Corporation, Tokyo, JP;
Inventor:
Hideo Kido, Kanagawa, JP;
Assignee:
SONY CORPORATION, Tokyo, JP;
Attorney:
Primary Examiner:
Assistant Examiner:
Int. Cl.
CPC ...
H01L 27/146 (2006.01); H04N 5/238 (2006.01); H04N 5/359 (2011.01); H04N 5/374 (2011.01); H04N 5/355 (2011.01);
U.S. Cl.
CPC ...
H01L 27/14656 (2013.01); H01L 27/14614 (2013.01); H01L 27/14643 (2013.01); H04N 5/238 (2013.01); H04N 5/355 (2013.01); H04N 5/3592 (2013.01); H04N 5/374 (2013.01);
Abstract
The present technology relates to a solid-state imaging device and an electronic device capable of improving a saturation characteristic. A photo diode is formed on a substrate, and a floating diffusion accumulates a signal charge read from the photo diode. A plurality of vertical gate electrodes is formed from a surface of the substrate in a depth direction in a region between the photo diode and the floating diffusion, and an overflow path is formed in a region interposed between a plurality of vertical gate electrodes. The present technology may be applied to a CMOS image sensor.