The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Dec. 07, 2021
Filed:
Nov. 15, 2019
SK Hynix Inc., Gyeonggi-do, KR;
Sung Lae Oh, Chungcheongbuk-do, KR;
Jin Ho Kim, Gyeonggi-do, KR;
Sang Hyun Sung, Chungcheongbuk-do, KR;
Young Ki Kim, Gyeonggi-do, KR;
Byung Hyun Jeon, Gyeonggi-do, KR;
SK hynix Inc., Gyeonggi-do, KR;
Abstract
A semiconductor memory device includes a substrate having a second region extending in a first direction; a memory block including electrodes; a slit dividing the memory block into first and second electrode structures in the second region; and step-shaped grooves formed in the memory block in the second region, and divided by the slit. In the second region, the first and second electrode structures are adjacently disposed with the slit interposed therebetween, in a second direction intersecting with the first direction. Each of the electrodes of the first electrode structure has a first pad region, each of the electrodes of the second electrode structure has a second pad region, and first and second pad regions of the first and second electrode structures which are positioned in the same step-shaped groove and are disposed at the same layers are adjacently disposed in the second direction with the slit interposed therebetween.