The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Dec. 07, 2021

Filed:

Sep. 03, 2019
Applicant:

Mitsubishi Electric Corporation, Tokyo, JP;

Inventors:

Kenta Nakahara, Tokyo, JP;

Akitoshi Shirao, Tokyo, JP;

Assignee:
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 23/31 (2006.01); H01L 21/56 (2006.01); H01L 23/498 (2006.01); H01L 23/00 (2006.01); H01L 23/29 (2006.01); H02M 7/44 (2006.01); B29K 63/00 (2006.01); H02P 27/08 (2006.01); B29C 67/04 (2017.01); B29L 31/34 (2006.01);
U.S. Cl.
CPC ...
H01L 23/3121 (2013.01); H01L 21/565 (2013.01); H01L 23/293 (2013.01); H01L 23/49838 (2013.01); H01L 24/40 (2013.01); H01L 24/84 (2013.01); H02M 7/44 (2013.01); B29C 67/04 (2013.01); B29K 2063/00 (2013.01); B29L 2031/3406 (2013.01); H01L 24/32 (2013.01); H01L 24/73 (2013.01); H01L 2224/32225 (2013.01); H01L 2224/40155 (2013.01); H01L 2224/40505 (2013.01); H01L 2224/73263 (2013.01); H01L 2224/8484 (2013.01); H01L 2924/01029 (2013.01); H01L 2924/01047 (2013.01); H02P 27/08 (2013.01);
Abstract

A method of manufacturing a semiconductor device includes providing, in a housing, an insulating substrate having a metal pattern, a semiconductor chip, a sinter material applied on the semiconductor chip, and a terminal, providing multiple granular sealing resins supported by a grid provided in the housing, heating an inside of the housing until a temperature thereof reaches a first temperature higher than a room temperature and thereby discharging a vaporized solvent of the sinter material out of the housing via a gap of the grid and a gap of the sealing resins, and heating the inside of the housing until the temperature thereof reaches a second temperature higher than the first temperature and thereby causing the melted sealing resins to pass the gap of the grid and form a resin layer covering the semiconductor chip.


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