The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Dec. 07, 2021
Filed:
Jan. 14, 2019
Applicant:
Princeton Optronics, Inc., Mercerville, NJ (US);
Inventors:
Guoyang Xu, Newtown, PA (US);
Jean-Francois Seurin, Princeton Junction, NJ (US);
Chuni Ghosh, West Windsor, NJ (US);
Assignee:
Princeton Optronics, Inc., Mercerville, NJ (US);
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 21/285 (2006.01); H01L 21/324 (2006.01); H01L 29/45 (2006.01); H01S 5/042 (2006.01); H01S 5/183 (2006.01); H01L 21/768 (2006.01);
U.S. Cl.
CPC ...
H01L 21/28575 (2013.01); H01L 21/324 (2013.01); H01L 29/452 (2013.01); H01S 5/0421 (2013.01); H01L 21/76841 (2013.01); H01L 21/76853 (2013.01); H01L 21/76855 (2013.01); H01L 21/76858 (2013.01); H01L 29/454 (2013.01); H01S 5/183 (2013.01);
Abstract
Ohmic contacts, including materials and processes for forming n-type ohmic contacts on n-type semiconductor substrates at low temperatures, are disclosed. Materials include reactant layers, n-type dopant layers, capping layers, and in some instances, adhesion layers. The capping layers can include metal layers and diffusion barrier layers. Ohmic contacts can be formed on n-type semiconductor substrates at temperatures between 150 and 250° C., and can resist degradation during operation.