logo

For the Inventor, By the Inventor

The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Patent No.:

US 11195721 B1

PDFFull Text
Date of Patent:
Dec. 07, 2021

Filed:

Jan. 14, 2019

Ohmic contacts and methods for manufacturing the same

Applicant:

Princeton Optronics, Inc., Mercerville, NJ (US);

Inventors:

Guoyang Xu, Newtown, PA (US);

Jean-Francois Seurin, Princeton Junction, NJ (US);

Chuni Ghosh, West Windsor, NJ (US);

Assignee:

Princeton Optronics, Inc., Mercerville, NJ (US);

Attorney:

Michael Best and Friedrich LLP

Primary Examiner:

Mary A Wilczewski

Int. Cl.
CPC ...
H01L 21/285 (2006.01); H01L 21/324 (2006.01); H01L 29/45 (2006.01); H01S 5/042 (2006.01); H01S 5/183 (2006.01); H01L 21/768 (2006.01);
U.S. Cl.
CPC ...
H01L 21/28575 (2013.01); H01L 21/324 (2013.01); H01L 29/452 (2013.01); H01S 5/0421 (2013.01); H01L 21/76841 (2013.01); H01L 21/76853 (2013.01); H01L 21/76855 (2013.01); H01L 21/76858 (2013.01); H01L 29/454 (2013.01); H01S 5/183 (2013.01);
Abstract

Ohmic contacts, including materials and processes for forming n-type ohmic contacts on n-type semiconductor substrates at low temperatures, are disclosed. Materials include reactant layers, n-type dopant layers, capping layers, and in some instances, adhesion layers. The capping layers can include metal layers and diffusion barrier layers. Ohmic contacts can be formed on n-type semiconductor substrates at temperatures between 150 and 250° C., and can resist degradation during operation.

Find Patent Forward Citations

Xu, Guoyang. (2021). Ohmic contacts and methods for manufacturing the same (U.S. Patent No. 11195721). U.S. Patent and Trademark Office. https://idiyas.com/patent/badge/11195721

Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile

Loading…