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The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Patent No.:

US 11195712 B1

PDFFull Text
Date of Patent:
Dec. 07, 2021

Filed:

Jan. 14, 2020

Process for deposition of titanium oxynitride for use in integrated circuit fabrication

Applicant:

Asm Ip Holding B.v., Almere, NL;

Inventors:

Viljami J. Pore, Helsinki, FI;

Seiji Okura, Sagamihara, JP;

Hidemi Suemori, Helsinki, FI;

Assignee:

ASM IP HOLDING B.V., Almere, NL;

Attorney:

Knobbe, Martens, Olson & Bear LLP

Primary Examiner:

Jiong-Ping Lu

Int. Cl.
CPC ...
H01L 21/02 (2006.01); H01L 21/311 (2006.01); C23C 16/30 (2006.01); C23C 16/455 (2006.01); H01L 21/28 (2006.01); H01L 21/033 (2006.01);
U.S. Cl.
CPC ...
H01L 21/02186 (2013.01); C23C 16/308 (2013.01); C23C 16/4554 (2013.01); C23C 16/45525 (2013.01); C23C 16/45527 (2013.01); C23C 16/45531 (2013.01); C23C 16/45534 (2013.01); C23C 16/45536 (2013.01); C23C 16/45542 (2013.01); C23C 16/45553 (2013.01); H01L 21/0228 (2013.01); H01L 21/02205 (2013.01); H01L 21/02249 (2013.01); H01L 21/02271 (2013.01); H01L 21/02274 (2013.01); H01L 21/0337 (2013.01); H01L 21/28202 (2013.01); H01L 21/31111 (2013.01); H01L 21/31122 (2013.01); H01L 21/31144 (2013.01);
Abstract

A process is provided for depositing a substantially amorphous titanium oxynitride thin film that can be used, for example, in integrated circuit fabrication, such as in forming spacers in a pitch multiplication process. The process comprises contacting the substrate with a titanium reactant and removing excess titanium reactant and reaction byproducts, if any. The substrate is then contacted with a second reactant which comprises reactive species generated by plasma, wherein one of the reactive species comprises nitrogen. The second reactant and reaction byproducts, if any, are removed. The contacting and removing steps are repeated until a titanium oxynitride thin film of desired thickness has been formed.

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