The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Dec. 07, 2021

Filed:

Jul. 22, 2020
Applicant:

Panasonic Semiconductor Solutions Co., Ltd., Kyoto, JP;

Inventors:

Yuhei Yoshimoto, Hyogo, JP;

Yoshikazu Katoh, Osaka, JP;

Naoto Kii, Osaka, JP;

Attorney:
Primary Examiner:
Int. Cl.
CPC ...
G11C 11/00 (2006.01); G11C 7/24 (2006.01); G11C 13/00 (2006.01);
U.S. Cl.
CPC ...
G11C 13/0059 (2013.01); G11C 13/004 (2013.01); G11C 13/0007 (2013.01); G11C 13/0069 (2013.01); G11C 2213/79 (2013.01);
Abstract

A non-volatile memory device includes: a memory group of a plurality of variable resistance memory cells in which digital data is recorded according to a magnitude of a resistance value, the memory group including at least one data cell and at least one dummy cell which are associated with each other; and a read circuit which performs, in parallel, a read operation on each of the plurality of memory cells included in the memory group. Dummy data, for reducing a correlation between a side-channel leakage generated when the read operation is performed by the read circuit and information data recorded in the at least one data cell, is recorded in the at least one dummy cell.


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