The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Dec. 07, 2021

Filed:

Jan. 24, 2020
Applicant:

Western Digital Technologies, Inc., San Jose, CA (US);

Inventors:

Stella Achtenberg, Netanya, IL;

Eran Sharon, Rishon Lezion, IL;

David Rozman, Kiryat-Malakhi, IL;

Alon Eyal, Zichron Yaakov, IL;

Idan Alrod, Herzliya, IL;

Dana Lee, Saratoga, CA (US);

Assignee:
Attorneys:
Primary Examiner:
Int. Cl.
CPC ...
G11C 7/04 (2006.01); G06F 3/06 (2006.01); G11C 16/26 (2006.01); G11C 11/56 (2006.01); G06F 11/10 (2006.01); G11C 16/10 (2006.01); G11C 16/34 (2006.01); G11C 29/02 (2006.01); G11C 29/52 (2006.01); G11C 29/04 (2006.01);
U.S. Cl.
CPC ...
G06F 3/0679 (2013.01); G06F 3/064 (2013.01); G06F 3/0619 (2013.01); G06F 11/1048 (2013.01); G06F 11/1068 (2013.01); G11C 7/04 (2013.01); G11C 11/5628 (2013.01); G11C 11/5642 (2013.01); G11C 16/10 (2013.01); G11C 16/26 (2013.01); G11C 16/3418 (2013.01); G11C 29/021 (2013.01); G11C 29/028 (2013.01); G11C 29/52 (2013.01); G11C 2029/0409 (2013.01);
Abstract

A data storage device includes a non-volatile memory and a controller coupled to the non-volatile memory. The controller is operable to measure a first threshold voltage (VT) of a memory cell under a first parameter at a read temperature and measure a second VT of the memory cell under a second parameter at the read temperature in which the first parameter is different from the second parameter. A VT correction term for the memory cell is determined based upon the first VT measurement and the second VT measurement. A read VT of the memory cell is adjusted by using the VT correction term.


Find Patent Forward Citations

Loading…