The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Dec. 07, 2021

Filed:

Jan. 31, 2020
Applicant:

Fujitsu Limited, Kawasaki, JP;

Inventors:

Ryo Suzuki, Fujisawa, JP;

Hironori Nishino, Isehara, JP;

Koji Tsunoda, Atsugi, JP;

Assignee:

FUJITSU LIMITED, Kawasaki, JP;

Attorney:
Primary Examiner:
Int. Cl.
CPC ...
G01J 5/20 (2006.01); H01L 27/146 (2006.01); H01L 31/101 (2006.01); G01J 5/00 (2006.01);
U.S. Cl.
CPC ...
G01J 5/20 (2013.01); H01L 27/14649 (2013.01); H01L 31/101 (2013.01); G01J 2005/0077 (2013.01); G01J 2005/204 (2013.01);
Abstract

An infrared detector includes: a laminate of semiconductor in which a first electrode layer, a light receiving layer, and a second electrode layer are laminated in this order; a first insulating film configured to be in contact with the laminate and covers a surface of the laminate; and a second insulating film configured to be in contact with and covers a surface of the first insulating film opposite to an interface between the first insulating film and the laminate, wherein the first insulating film is configured to have a lower Gibbs free energy than an oxide of a material from which the laminate is formed, and in the second insulating film, diffusion of impurity is larger than in the first insulating film.


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