The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Dec. 07, 2021

Filed:

Nov. 01, 2018
Applicant:

Lg Chem, Ltd., Seoul, KR;

Inventors:

Junghwan Kim, Daejeon, KR;

Ho Rim Lee, Daejeon, KR;

Chan Yeup Chung, Daejeon, KR;

Jung Min Ko, Daejeon, KR;

Manshik Park, Daejeon, KR;

Assignee:
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
C30B 29/36 (2006.01); C30B 15/36 (2006.01); C30B 29/06 (2006.01); H01L 29/16 (2006.01); H01L 29/04 (2006.01);
U.S. Cl.
CPC ...
C30B 15/36 (2013.01); C30B 29/06 (2013.01); C30B 29/36 (2013.01); H01L 29/04 (2013.01); H01L 29/1608 (2013.01);
Abstract

A silicon-based molten composition according to an exemplary embodiment of the present invention is used in a solution growing method for forming silicon carbide single crystal, and is expressed in Formula 1 including silicon (Si), chromium (Cr), vanadium (V), and aluminum (Al).SiCrVAl  [Formula 1]In Formula 1, a is equal to or greater than 0.4 and equal to or less than 0.9, b+c is equal to or greater than 0.1 and equal to or less than 0.6, c/(b+c) is equal to or greater than 0.05 and equal to or less than 0.95, and d is equal to or greater than 0.01 and equal to or less than 0.1.


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