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The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Patent No.:

US 11192971 B1

PDFFull Text
Date of Patent:
Dec. 07, 2021

Filed:

Sep. 06, 2019

Pattern forming material, composition for pattern formation, pattern forming method and method of manufacturing semiconductor device

Applicant:

Toshiba Memory Corporation, Tokyo, JP;

Inventors:

Norikatsu Sasao, Kawasaki Kanagawa, JP;

Koji Asakawa, Kawasaki Kanagawa, JP;

Shinobu Sugimura, Tokyo, JP;

Assignee:

TOSHIBA MEMORY CORPORATION, Tokyo, JP;

Attorney:

Finnegan, Henderson, Farabow, Garrett & Dunner, L.L.P.

Primary Examiner:

Caleen O Sullivan

Int. Cl.
CPC ...
C08F 220/14 (2006.01); C08F 220/16 (2006.01); C08F 218/04 (2006.01); G03F 7/038 (2006.01); G03F 7/039 (2006.01); G03F 7/00 (2006.01); C09D 133/08 (2006.01); C09D 133/10 (2006.01); C09D 131/02 (2006.01); B29C 43/02 (2006.01); C23C 16/455 (2006.01); C23C 16/20 (2006.01); H01L 21/027 (2006.01); H01L 21/311 (2006.01); H01L 21/285 (2006.01); H01L 21/3213 (2006.01); B29K 33/00 (2006.01); G03F 7/16 (2006.01); G03F 7/20 (2006.01); B29L 31/34 (2006.01);
U.S. Cl.
CPC ...
C08F 220/14 (2013.01); B29C 43/02 (2013.01); C08F 218/04 (2013.01); C08F 220/16 (2013.01); C09D 131/02 (2013.01); C09D 133/08 (2013.01); C09D 133/10 (2013.01); C23C 16/20 (2013.01); C23C 16/45553 (2013.01); G03F 7/0002 (2013.01); G03F 7/038 (2013.01); G03F 7/039 (2013.01); H01L 21/0273 (2013.01); H01L 21/28556 (2013.01); H01L 21/31138 (2013.01); H01L 21/32135 (2013.01); H01L 21/32139 (2013.01); B29K 2033/08 (2013.01); B29L 2031/3406 (2013.01); G03F 7/162 (2013.01); G03F 7/168 (2013.01); G03F 7/20 (2013.01);
Abstract

According to one embodiment, a pattern forming material is disclosed. The pattern forming material contains a polymer. The polymer includes a specific first monomer unit. The monomer unit has a structure having ester of a carboxyl group at a terminal of a side chain. In the ester, a carbon atom bonded to an oxygen atom next to a carbonyl group is a primary carbon, a secondary carbon or a tertiary carbon. The pattern forming material is used for manufacturing a composite film as a mask pattern for processing a target film on a substrate. The composite film is formed by a process including, forming an organic film on the target film with the pattern forming material, patterning the organic film, and forming the composite film by infiltering a metal compound into the patterned organic film.

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