The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Dec. 07, 2021
Filed:
Aug. 16, 2019
Applicant:
International Business Machines Corporation, Armonk, NY (US);
Inventors:
Qing Cao, Yorktown Heights, NY (US);
Hariklia Deligianni, Alpine, NJ (US);
Fei Liu, Yorktown Heights, NY (US);
Assignee:
INTERNATIONAL BUSINESS MACHINES CORPORATION, Armonk, NY (US);
Attorneys:
Primary Examiner:
Int. Cl.
CPC ...
A61N 1/05 (2006.01); H01L 21/762 (2006.01); A61B 5/00 (2006.01); A61N 1/36 (2006.01); A61B 5/04 (2006.01); A61B 5/24 (2021.01); A61B 5/291 (2021.01); H01L 21/304 (2006.01); H01L 21/78 (2006.01);
U.S. Cl.
CPC ...
A61N 1/0529 (2013.01); A61B 5/24 (2021.01); A61B 5/291 (2021.01); A61B 5/4094 (2013.01); A61B 5/6868 (2013.01); A61N 1/0531 (2013.01); A61N 1/36064 (2013.01); A61N 1/36067 (2013.01); H01L 21/76251 (2013.01); A61B 2562/125 (2013.01); A61B 2562/164 (2013.01); H01L 21/304 (2013.01); H01L 21/7806 (2013.01);
Abstract
Aspects include high resolution brain-electronic interfaces and related methods. Aspects include forming a semiconductor circuit on a substrate, depositing a tensile stress layer on the circuit, and separating the semiconductor circuit from a portion of the silicon substrate. Aspects also include removing the tensile stress layer from the semiconductor circuit and transferring the semiconductor circuit to a biocompatible film.