The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Nov. 30, 2021

Filed:

May. 24, 2017
Applicant:

Robert Bosch Gmbh, Stuttgart, DE;

Inventors:

Radoslav Rusanov, Stuttgart, DE;

Sabine Nagel, Tamm, DE;

Assignee:

Robert Bosch GmbH, Stuttgart, DE;

Attorneys:
Primary Examiner:
Int. Cl.
CPC ...
H05B 3/14 (2006.01); H05B 3/16 (2006.01); H05B 3/26 (2006.01); G01N 27/16 (2006.01);
U.S. Cl.
CPC ...
H05B 3/148 (2013.01); G01N 27/16 (2013.01); H05B 3/141 (2013.01); B81B 2201/0214 (2013.01); B81C 2201/0181 (2013.01); H05B 3/16 (2013.01); H05B 3/265 (2013.01); H05B 2203/017 (2013.01);
Abstract

A method for producing an electromigration-resistant crystalline transition-metal silicide layer of a layer sequence, for example, to provide a micro heater includes, supplying a semiconductor substrate including an electrically insulating layer; physically depositing a transition metal on the electrically insulating layer; carrying out a plasma-enhanced chemical vapor deposition while forming an inert gas plasma; conveying monosilane to the inert gas plasma, with the monosilane decomposing into silicon and hydrogen and the silicon in the gaseous phase entering into a chemical reaction with the transition metal in order to form the electromigration-resistant crystalline transition-metal silicide layer.


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