The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Nov. 30, 2021

Filed:

Sep. 27, 2019
Applicant:

Murata Manufacturing Co., Ltd., Kyoto-fu, JP;

Inventors:

Masao Kondo, Nagaokakyo, JP;

Yuichi Saito, Nagaokakyo, JP;

Assignee:
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H03F 3/68 (2006.01); H03F 3/04 (2006.01); H03F 3/193 (2006.01); H03F 1/30 (2006.01); H03G 1/00 (2006.01);
U.S. Cl.
CPC ...
H03F 3/193 (2013.01); H03F 1/30 (2013.01); H03G 1/0017 (2013.01); H03F 2200/451 (2013.01);
Abstract

A power amplifier including a first transistor for amplifying and outputting a radio frequency signal, a second transistor, a third transistor for supplying a bias current, a first voltage supply circuit for supplying a lower voltage to a base of the third transistor as a temperature of a first diode is higher. The third transistor and the first transistor, or the third transistor and the second transistor, are disposed without another electronic element interposed therebetween. The third transistor is disposed such that a distance between the third transistor and the first transistor is smaller than a distance between the first voltage supply circuit and the first transistor, or a distance between the third transistor and the second transistor is smaller than a distance between the first voltage supply circuit and the second transistor.


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