The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Nov. 30, 2021

Filed:

Jan. 10, 2018
Applicant:

Semiconductor Energy Laboratory Co., Ltd., Kanagawa-ken, JP;

Inventors:

Satoko Shitagaki, Kanagawa, JP;

Tsunenori Suzuki, Kanagawa, JP;

Satoshi Seo, Kanagawa, JP;

Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 51/50 (2006.01);
U.S. Cl.
CPC ...
H01L 51/5048 (2013.01); H01L 2251/552 (2013.01);
Abstract

In a light-emitting element including an EL layer between a pair of electrodes, between an electrode functioning as an anode and a fourth layer having a light-emitting property (light-emitting layer), the EL layer includes at least a first layer having a hole-injecting property (hole-injecting layer), a second layer having a hole-transporting property (first hole-transporting layer), and a third layer having a hole-transporting property (second hole-transporting layer). The absolute value of the highest occupied molecular orbital level (HOMO level) of the second layer is larger than the absolute value of the highest occupied molecular orbital level (HOMO level) of each of the first layer and the third layer. With such a structure, the rate of transport of holes injected from the electrode functioning as an anode is reduced and emission efficiency of the light-emitting element is improved.


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