The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Nov. 30, 2021

Filed:

Sep. 30, 2019
Applicant:

International Business Machines Corporation, Armonk, NY (US);

Inventors:

Reinaldo Vega, Mahopac, NY (US);

Takashi Ando, Eastchester, NY (US);

Jianshi Tang, Beijing, CN;

Praneet Adusumilli, Somerset, NJ (US);

Attorneys:
Primary Examiner:
Int. Cl.
CPC ...
H01L 45/00 (2006.01);
U.S. Cl.
CPC ...
H01L 45/1233 (2013.01); H01L 45/1253 (2013.01); H01L 45/1675 (2013.01); H01L 45/08 (2013.01); H01L 45/146 (2013.01); H01L 45/147 (2013.01);
Abstract

Tapered resistive memory devices with interface dipoles are provided. In one aspect, a ReRAM device includes: a bottom electrode; a core dielectric that is thermally conductive disposed on the bottom electrode; an oxide resistive memory cell disposed along outer sidewalls of the core dielectric, wherein the oxide resistive memory cell has inner edges adjacent to the core dielectric, and outer edges that are tapered; an outer coating disposed adjacent to the outer edges of the oxide resistive memory cell; and a top electrode disposed on the core dielectric, the oxide resistive memory cell, and the outer coating. A method of forming a ReRAM device as well as a method of operating a ReRAM device are also provided.


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