The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Nov. 30, 2021

Filed:

Feb. 12, 2020
Applicant:

Seoul Viosys Co., Ltd., Ansan-si, KR;

Inventors:

Jong Min Jang, Ansan-si, KR;

Chae Hon Kim, Ansan-si, KR;

Chang Youn Kim, Ansan-si, KR;

Jae Hee Lim, Ansan-si, KR;

Assignee:

Seoul Viosys Co., Ltd., Ansan-si, KR;

Attorney:
Primary Examiner:
Assistant Examiner:
Int. Cl.
CPC ...
H01L 33/36 (2010.01); H01L 33/40 (2010.01); H01L 33/32 (2010.01); H01L 23/00 (2006.01); H01L 33/10 (2010.01); H01L 33/60 (2010.01); H01L 33/46 (2010.01); H01L 33/00 (2010.01); H01L 33/22 (2010.01); H01L 33/20 (2010.01);
U.S. Cl.
CPC ...
H01L 33/405 (2013.01); H01L 24/13 (2013.01); H01L 33/10 (2013.01); H01L 33/32 (2013.01); H01L 33/60 (2013.01); H01L 33/007 (2013.01); H01L 33/0093 (2020.05); H01L 33/20 (2013.01); H01L 33/22 (2013.01); H01L 33/46 (2013.01); H01L 2933/0016 (2013.01); H01L 2933/0025 (2013.01);
Abstract

A light emitting diode including a side reflection layer. The light emitting diode includes: a semiconductor stack and a light exit surface having a roughened surface through which light generated from an active layer is emitted; side surfaces defining the light exit surface; and a side reflection layer covering at least part of the side surfaces. The light exit surface is disposed over a first conductivity type semiconductor layer opposite to the ohmic reflection layer, all layers from the active layer to the light exit surface are formed of gallium nitride-based semiconductors, and a distance from the active layer to the light exit surface is 50 μm or more.


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