The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Nov. 30, 2021
Filed:
Jun. 25, 2019
Applicant:
Epistar Corporation, Hsinchu, TW;
Inventors:
Meng-Yang Chen, Hsinchu, TW;
Rong-Ren Lee, Hsinchu, TW;
Assignee:
Epistar Corporation, Hsinchu, TW;
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 33/18 (2010.01); H01L 21/02 (2006.01); H01L 33/00 (2010.01); H01L 33/30 (2010.01); H01L 29/04 (2006.01); H01L 29/205 (2006.01); H01L 29/778 (2006.01); H01L 33/02 (2010.01); H01L 21/20 (2006.01); H01S 5/22 (2006.01);
U.S. Cl.
CPC ...
H01L 33/18 (2013.01); H01L 21/0243 (2013.01); H01L 21/02381 (2013.01); H01L 21/02461 (2013.01); H01L 21/02463 (2013.01); H01L 21/02538 (2013.01); H01L 21/02543 (2013.01); H01L 21/02598 (2013.01); H01L 21/2007 (2013.01); H01L 29/04 (2013.01); H01L 29/205 (2013.01); H01L 29/778 (2013.01); H01L 33/0025 (2013.01); H01L 33/0062 (2013.01); H01L 33/0066 (2013.01); H01L 33/025 (2013.01); H01L 33/30 (2013.01); H01L 33/0093 (2020.05); H01S 5/2206 (2013.01);
Abstract
A semiconductor substrate is provided in the present disclosure. The semiconductor substrate includes a first semiconductor layer and a second semiconductor layer on the first semiconductor layer. The first semiconductor layer has a first lattice constant (L1) and the second semiconductor layer has a second lattice constant (L2). A ratio of a difference (L2-L1) between the second lattice constant (L2) and the first lattice constant (L1) to the first lattice constant (L1) is greater than 0.036.